Yuri Erokhin
Keine laufenden Positionen mehr
Karriereverlauf von Yuri Erokhin
Ehemalige bekannte Positionen von Yuri Erokhin
| Unternehmen | Position | Beginn | Ende |
|---|---|---|---|
| IPG PHOTONICS CORPORATION | Corporate Officer/Principal | 01.03.2013 | - |
Ibis Technology Corp.
 Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Corporate Officer/Principal | - | - |
Ausbildung von Yuri Erokhin
| Moscow Institute of Physics & Technology | Graduate Degree |
| Russian Academy of Sciences | Doctorate Degree |
Statistik
International
| Vereinigte Staaten | 3 |
| Russland | 3 |
Operativ
| Corporate Officer/Principal | 2 |
| Graduate Degree | 1 |
| Doctorate Degree | 1 |
Sektoral
| Electronic Technology | 3 |
| Consumer Services | 3 |
Besetzte Positionen
Aktive
Inaktive
Börsennotierte Unternehmen
Private Unternehmen
Unternehmensverbindungen
| Börsennotierte Unternehmen | 1 |
|---|---|
| IPG PHOTONICS CORPORATION | Electronic Technology |
| Private Unternehmen | 1 |
|---|---|
Ibis Technology Corp.
Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Electronic Technology |
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