Dimitri Antoniadis
Corporate Officer/Principal bei Massachusetts Institute of Technology
Profil
Dimitri Antoniadis has been a Director of Ibis Technology Corp.
since 1996.
Dr. Antoniadis is the Ray and Maria Stata Professor of Electrical Engineering at the Massachusetts Institute of Technology and has been a Member of the Faculty since 1978.
Aktive Positionen von Dimitri Antoniadis
| Unternehmen | Position | Beginn |
|---|---|---|
| Massachusetts Institute of Technology | Corporate Officer/Principal | 01.01.1978 |
Ehemalige bekannte Positionen von Dimitri Antoniadis
| Unternehmen | Position | Ende |
|---|---|---|
Ibis Technology Corp.
 Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Direktor/Vorstandsmitglied | 17.02.2009 |
Erfahrungen
Besetzte Positionen
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Inaktive
Börsennotierte Unternehmen
Private Unternehmen
Beziehungen
Beziehungen ersten Grades
Unternehmen ersten Grades
Herr
Frau
Aufsichtsräte
Führungskräfte
Unternehmensverbindungen
| Private Unternehmen | 1 |
|---|---|
Ibis Technology Corp.
Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Electronic Technology |
